### (PDF) Measurement of Young s modulus and residual stress

Measurement of Young s modulus and residual stress of thin SiC layers for MEMS high temperature applications Oliver Pabstb c Michael Schifferd Ernst Obermeiera Tolga Tekina Klaus Dieter Langa Ha-Duong Ngo a a Technical University of Berlin Research Center for Microperipheric Technologies TIB 4/2-1 Gustav-Meyer-Allee 25 D-13355 Berlin Germany b Fraunhofer Institute for

Get Price### Determination of Young s modulus and residual stress of

Abstract. This paper reportsin situ measurement of Young s modulus and residual stress of electroless nickel films through the use of microfabricated nickel test structures including electrostatic microactuators and passive devices. Th test structures are fabricated in a new surface micromachining process termed "nickel surface micromachining" using electroless plated nickel as the

Get Price### Measurement of Young s modulus and residual stress of

Jul 22 2004 · The calculated results based on the experimental measurements showed that the average Young s modulus and residual stress of the electroplated copper films are 115.2 GPa and 19.3 MPa respectively while the Young s modulus measured by the nanoindenter for the same copper film with silicon substrate is 110±1.67 GPa.

Get Price### RESIDUAL STRESS AND YOUNG S MODULUS MEASUREMENT

RESIDUAL STRESS AND YOUNG S MODULUS MEASUREMENT OF CAPACITIVE MICROMACHINED ULTRASONIC TRANSDUCER MEMBRANES Goksen G. Yaralioglu Arif S. Ergun Baris Bayram Theodore Marentis and B.T. Khuri-Yakub Edward L. Ginzton Laboratory Stanford University Stanford CA 94305. Abstmct- Membranes supported by posts are used as vibrating

Get Price### Extraction of Young s modulus and residual stress of

Oct 01 2008 · Jaibir Sharma "Extraction of Young s modulus and residual stress of structural materials through measurement of pull-in voltage and off-capacitance of beams " Journal of Micro/Nanolithography MEMS and MOEMS 7(4) 043020 (1 October 2008).

Get Price### (PDF) Measurement of Young s modulus and residual stress

For the samples tested average Young s modulus and residual stress measured are 417 GPa and 89 MPa for polycrystalline samples. For single crystal samples the according values are 388 GPa and 217

Get Price### Measurement Methods of Residual Stresses

of the stress measurement requires a stress free sample which is the disadvantage of this method. In addition to above methods photoelastic and thermoelastic are not commonly used non-destructive methods for residual stress measurements. Stresstech is a research oriented company with more than 30 years experience in residual stress engineering

Get Price### Determination of Young s modulus and residual stress of

Abstract. This paper reportsin situ measurement of Young s modulus and residual stress of electroless nickel films through the use of microfabricated nickel test structures including electrostatic microactuators and passive devices. Th test structures are fabricated in a new surface micromachining process termed "nickel surface micromachining" using electroless plated nickel as the

Get Price### Measurement of Mechanical Properties of Low Stress Silicon

The residual stress wa is the normal force and z by the Youngs Modulus o the geometry and the resid III. RESULTS AND D The data from one force– Youngs Modulus. The gra long narrow beam where E is the Youngs Modulus beam I is the moment of al Properties of Low Stress Silicon Nitride 0.0571 k2=0.0192 and k3 =0.0082 is calcula

Get Price### Determination of Young s modulus and residual stress of

Abstract. This paper reportsin situ measurement of Young s modulus and residual stress of electroless nickel films through the use of microfabricated nickel test structures including electrostatic microactuators and passive devices. Th test structures are fabricated in a new surface micromachining process termed "nickel surface micromachining" using electroless plated nickel as the

Get Price### The evaluation of Young s modulus and residual stress of

Mar 13 2006 · The average of Young s modulus and residual stress is about 115.2 GPa and 19.3 MPa respectively. The dispersion of the data may be attributed to the non-uniformity of the film thickness during the film preparation some flaws in copper microbridge and the possible deviation of the indenter tip from the microbridge center.

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Residual stress and Young s modulus measurement of capacitive micromachined ultrasonic transducer membranes

Get Price### Measurement of Young s modulus and residual stress of thin

Jan 11 2012 · Young s modulus and residual stress are important mechanical properties for the design of sophisticated SiC-based MEMS devices. In particular residual stresses are strongly dependent on the deposition conditions. Literature values for Young s modulus range from 100 to 400 GPa and residual stresses range from 98 to 486 MPa.

Get Price### Young s modulus and residual stress of MEMS gold beams

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Get Price### Effect of Young s modulus evolution on residual stress

of Young s modulus would influence the accuracy of measurement of residual stress. In this paper the apparent Young s modulus of 8YSZ TBCs subjected to thermal cycling was measured by nanoindentation and then in combination with the data from XRD these results were used to calculate the residual stress of TBCs.

Get Price### The evaluation of Young s modulus and residual stress of

Mar 13 2006 · The average of Young s modulus and residual stress is about 115.2 GPa and 19.3 MPa respectively. The dispersion of the data may be attributed to the non-uniformity of the film thickness during the film preparation some flaws in copper microbridge and the possible deviation of the indenter tip from the microbridge center.

Get Price### Measurement of Mechanical Properties of Low Stress Silicon

The residual stress wa is the normal force and z by the Youngs Modulus o the geometry and the resid III. RESULTS AND D The data from one force– Youngs Modulus. The gra long narrow beam where E is the Youngs Modulus beam I is the moment of al Properties of Low Stress Silicon Nitride 0.0571 k2=0.0192 and k3 =0.0082 is calcula

Get Price### Digital Image Correlation and Residual Stress Measurement

As a first effort to use the proposed concept in residual stress measurement only the simplest case is considered in this paper i.e. through hole drilling with a residual stress with uniform distribution along depth within a small elastic strain limit. To fulfil the full potential of

Get Price### Stress Evaluation at the Maximum Strained State by EBSD

Thus the measurement of the residual stress was implemented with special care so as to not loosen the bolts. The methods used for measuring the residual stress were the X-ray diffraction method strain gauge method and center hole drilling method. In each method a Young s modulus of 196 GPa was used to calculate the stress. The measurement

Get Price### RESIDUAL STRESS AND YOUNG S MODULUS

RESIDUAL STRESS AND YOUNG S MODULUS MEASUREMENT OF CAPACITIVE MICROMACHINED ULTRASONIC TRANSDUCER MEMBRANES Goksen G. Yaralioglu Arif S. Ergun Baris Bayram Theodore Marentis and B.T. Khuri-Yakub Edward L. Ginzton Laboratory Stanford University Stanford CA 94305. Abstmct- Membranes supported by posts are used as vibrating

Get Price### (PDF) Measurement of Young s modulus and residual stress

For the samples tested average Young s modulus and residual stress measured are 417 GPa and 89 MPa for polycrystalline samples. For single crystal samples the according values are 388 GPa and 217

Get Price### Assessment of residual stresses in steels and carbide

Residual stress has no effect on hardness and Young s modulus when contact area is accurately measured 7 . It has been proposed to determine the yield stress and elastic limit with methods based on an inverse analysis instead of analytical solutions 8 . The main and maybe the most unreliable assumption of these methods is the unique-

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Measurement of Young s modulus and residual stress of atomic layer deposited Al 2O 3 and Pt thin films Fabian Purkl1 2 Alwin Daus 3 Timothy S English 4 J Provine5 Ando Feyh 2 Gerald Urban1 and Thomas W Kenny 4 1 Department of Microsystems Engineering University of Freiburg Georges-Köhler-Allee 103 79110 Freiburg Germany

Get Price### Measurement of Young s modulus and residual stress of thin

Young s modulus and residual stress are important mechanical properties for the design of sophisticated SiC-based MEMS devices. In particular residual stresses are strongly dependent on the deposition conditions. Literature values for Young s modulus range from 100 to 400 GPa and residual stresses range from 98 to 486 MPa.

Get Price### Measurement of residual stress and elastic modulus of

Dec 01 2005 · Average residual stress biaxial modulus and Young s modulus (i.e. for ν = 0.168) values for poly-SiC films from three different deposition pressures and fixed deposition temperature of 1173 K SiH 2 Cl 2 flow rate of 54 sccm and C 2 H 2 flow rate of 180 sccm

Get Price### A measurement of Young s modulus and residual stress in

A measurement of Young s modulus and residual stress in MEMS bridges using a surface proﬁler M W Denhoff 2 One part T r is due to the residual stress in the thin ﬁlm and is a constant. The other part T s is due to the stretching of the beam as

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